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Proman NAND/NOR programmer

guclusat

Tanınmış Üye
Süper Moderatör
#1
Desteklediği chipler

Kod:
<Hynix>
128Mbits: HY27US08281A
256Mbits: HY27US08561A
512Mbits: H27U518S2CTR, HY27US08121A
1Gbits: HY27UF081G2A
2Gbits: HY27UF082G2B
4Gbits: H27U4G8F2D*
8Gbits:  H27U8G8G5D*, HY27UG08*
16Gbits: H27UAG8T2BTR,HY27UH08*, HY27UH08AG*,
32Gbits: H27UBG8T2A, H27UBG8T2B
 
<Samsung>
128Mbits: K9F2808U0A, K9F2808U0B, K9F2808U0C-YCB0
256Mbits: K9F5608U0A, K9F5608U0B-PCB0
512Mbits: K9F1208U0A, K9F2808U0B, K9F2808U0C-PCB0
1Gbits: K9F1G08U0A, K9F1G08U0B, K9F1G08U0C-PCB0
2Gbits: K9F2G08U0A, K9F2G08U0B, K9F2G08U0C
4Gbits: K9F4G08U0A, K9F4G08U0B-PCB0, K9F4G08U0C, K9F4G08U0D-SCB0, K9G4G08U0*
8Gbits: K9G8G08U0A, K9G8G08U0M, K9K8G08U0A, K9F8G08U0M
16Gbits: K9GAG08U0D, K9GAG08U0E
 
<Micron>
128Mbits: NAND128W3A*
256Mbits: NAND256W3A*
512Mbits: NAND512W3A*
1Gbits: MT29F1G08*, MT29F1G08ABADAH4:D(FBGA63)
2Gbits: MT29F2G08*
4Gbits: MT29F4G08*
8Gbits: MT29F8G08*
32Gbits: MT29F32G08CBACAWP
<Spansion>
1Gbits: S34ML01G1
2Gbits: S34ML02G1
4Gbits: S34ML04G1
<ESMT>
1Gbits: F59L1G81A
 
<Toshiba>
1Gbits: TC58NVG0S3, TC58DVG02D5TA00, TC58NYG0S3EBAI4(FBGA63, 1.8V)
2Gbits: TC58NVG1S3
4Gbits: TC58NVG2S3
 
NOR Flash:
<SST>
SST39VF6401B, SST39VF3201B,
SST39VF6401, SST39VF3201, SST39VF1601, 
<Micron>
JS28F320C3B*, JS28F320C3T*, TE28F320C3B*, TE28F320C3T*
<ST>
M28W320FCB, M28W320FCT
M29W160EB, M29W160ET 
<Spansion>
S29GL064N, S29GL032N,
S29GL128P
<EN>
EN29LV160B
 

guclusat

Tanınmış Üye
Süper Moderatör
#2
Hızını görmeniz için örnek veriler aşağıda yer almaktadır.

NAND ID: 0xecd35195_0x58ecd351
Manufacturer: Samsung
>>Auto detected successfully.
>>The parameters are as below:
*Page data area size2048 bytes.
*Page spare area size64 bytes.
*Each block has 64 pages
*The chip has 1 chip-select signals.
*There are 8192 blocks each chip-select.
*Total 8192 blocks each chip.
*Total memory size 1024 Mbytes
*Range 0x0 - 0x3fffffff
*Memory type: SLC NAND

Total 8192 blocks, 8179 good blocks.
Erase all good blocks successfully.

:
Programming to address 0x0.
To write spare area.
NAND ID: 0xecd35195_0x58ecd351
Manufacturer: Samsung
>>Auto detected successfully.
>>The parameters are as below:
*Page data area size2048 bytes.
*Page spare area size64 bytes.
*Each block has 64 pages
*The chip has 1 chip-select signals.
*There are 8192 blocks each chip-select.
*Total 8192 blocks each chip.
*Total memory size 1024 Mbytes
*Range 0x0 - 0x3fffffff
*Memory type: SLC NAND
Programming finished successfully. Total 1107296256(0x42000000) bytes.

:
NAND ID: 0xecd35195_0x58ecd351
Manufacturer: Samsung
>>Auto detected successfully.
>>The parameters are as below:
*Page data area size2048 bytes.
*Page spare area size64 bytes.
*Each block has 64 pages
*The chip has 1 chip-select signals.
*There are 8192 blocks each chip-select.
*Total 8192 blocks each chip.
*Total memory size 1024 Mbytes
*Range 0x0 - 0x3fffffff
*Memory type: SLC NAND
Reading data from 0x0 to 0x3fffffff.
To read out data of bad block(s).
To verify spare area data.
Verify successfully. Total 1107296256(0x42000000) bytes.


:
>>Use user-defined parameters as:
*Page data area size2048 bytes.
*Page spare area size64 bytes.
*Each block has 64 pages
*The chip has 1 chip-select signals.
*There are 16384 blocks each chip-select.
*Total 16384 blocks each chip.
*Total memory size 2048 Mbytes
BBLK: block2463[0x133e0000-0x133fffff], with spare area[0x13d7f000-0x13d9ffff]
BBLK: block3342[0x1a1c0000-0x1a1dffff], with spare area[0x1aece000-0x1aeeefff]
BBLK: block4762[0x25340000-0x2535ffff], with spare area[0x265da000-0x265fafff]
BBLK: block4823[0x25ae0000-0x25afffff], with spare area[0x26db7000-0x26dd7fff]
BBLK: block5496[0x2af00000-0x2af1ffff], with spare area[0x2c478000-0x2c498fff]
BBLK: block6119[0x2fce0000-0x2fcfffff], with spare area[0x314c7000-0x314e7fff]
BBLK: block10655[0x533e0000-0x533fffff], with spare area[0x55d7f000-0x55d9ffff]
BBLK: block11534[0x5a1c0000-0x5a1dffff], with spare area[0x5cece000-0x5ceeefff]
BBLK: block12954[0x65340000-0x6535ffff], with spare area[0x685da000-0x685fafff]
BBLK: block13015[0x65ae0000-0x65afffff], with spare area[0x68db7000-0x68dd7fff]
BBLK: block13688[0x6af00000-0x6af1ffff], with spare area[0x6e478000-0x6e498fff]
BBLK: block14311[0x6fce0000-0x6fcfffff], with spare area[0x734c7000-0x734e7fff]

Check chip finished. Totally 12 bad block(s) exist.
 

guclusat

Tanınmış Üye
Süper Moderatör
#4
NAND 2016

<Hynix>
128Mbits: HY27US08281A
256Mbits: HY27US08561A
512Mbits: H27U518S2CTR, HY27US08121A, HY27US08121B
1Gbits: HY27UF081G2A, HY27UF081G2M, H27U1G8F2BTR, HY27SF081G2M(1.8V)
2Gbits: HY27UF082G2B, H27U2G8F2CTR
4Gbits: H27U4G8F2D*
8Gbits: H27U8G8G5D*, HY27UG08*
<Samsung>
128Mbits: K9F2808U0A, K9F2808U0B, K9F2808U0C
256Mbits: K9F5608U0A, K9F5608U0B, K9F5608U0C, K9F5608U0D
512Mbits: K9F1208U0A, K9F1208U0B, K9F1208U0C,
1Gbits: K9F1G08U0A, K9F1G08U0B, KK9F1G08U0C, K9F1G08U0D, K9F1G08U0E
2Gbits: K9F2G08U0A, K9F2G08U0B, K9F2G08U0C
4Gbits: K9F4G08U0A, K9F4G08U0B-PCB0, K9F4G08U0C, K9F4G08U0D-SCB0, K9G4G08U0*
8Gbits: K9G8G08U0A, K9G8G08U0M, K9K8G08U0A, K9F8G08U0M
<Micron>
128Mbits: NAND128W3A*
256Mbits: NAND256W3A*
512Mbits: NAND512W3A*, NAND512W3B*, NAND512R3A*(1.8V)
1Gbits: MT29F1G08*, MT29F1G08ABADAH4:D(FBGA63), NAND01GW3B*
2Gbits: MT29F2G08*
4Gbits: MT29F4G08*
8Gbits: MT29F8G08ABABAWP-IT, NAND08GW3B2A, NAND08GW3B2C
<Spansion>
1Gbits: S34ML01G1, S34ML01G2, S34MS01G1(1.8V)
2Gbits: S34ML02G1, S34ML02G2, S34MS02G1(1.8V)
4Gbits: S34ML04G1, S34ML04G2, S34MS04G1(1.8V)
8Gbits: S34ML08G1, S34ML08G2
<ESMT>
1Gbits: F59L1G81A
<MXIC>
1Gbits: MX30LF1G08AA-TI, MX30LF1G08AA-XKI(FBGA63, 3.3V)
<Zentel>
1Gbits: A5U1GA31ATS, A5R1GA31ATS (1.8V),
2Gbits: A5U2GA31ATS
8Gbits: A5U8GA31ATS
<Toshiba>
128Mbits: TC58DVM72A1FT00
512Mbits: TC58DVM92A1FTI0, TC58DVM92A5TA00
1Gbits: TC58NVG0S3, TC58DVG02D5TA00, TC58NYG0S3EBAI4(FBGA63, 1.8V)
2Gbits: TC58NVG1S3
4Gbits: TC58NVG2S3
<ATO>
32Mbits: AFND5608U1-CKAK, AFND5608U1-CKCK(FBGA63)
64Mbits: AFND1208U1-CKA
1Gbits: AFND1G08U3-CKA
<WINBOND>
1Gbits: W29N01G*

NOR 2016

<AMD>
AM29F400AT*(需5V转接板), AM29F800BB(需5V转接板)
AM29LV800BT*, AM29LV800BB*, AM29LV160D*, AM29LV320D*
<CFEON>
EN29LV160B*
<Intel>
TE28F160C3*, TE28F320C3B*, TE28F320C3T*
<MXIC>
MX29GL320E*, MX29GL128E*, MX29LV800C*, MX29LV160D*, MX29LV320A*, MX29LV320C*,MX29LV640M*
KH29LV640D*
<Micron>
JS28F128M29EW*, JS28F256M29EW*, JS28F512M29EW*, JS28F00AM29EW*,
JS28F320C3B*, JS28F320C3T*
<SHARTP>
LH28F320BFHE-PTTL70, LH28F640BFHE-PTTLHIA
<Spansion>
S29AL004D*, S29AL008D*, S29AL008J*, S29AL016J*, S29AL016M*, S29GL032A*, S29JL032H*, S29GL032N*, S29JL064H*, S29JL064J*, S29GL064N*, S29GL128P*, S29GL128S*, S29GL128N*, S29GL256P*, S29GL512P*, S29GL01GP*
<SST>
SST39VF800A,
SST39VF6401B*, SST39VF3201B*,
SST39VF6401*, SST39VF3201*, SST39VF1601*,
SST39VF160*
<ST>
M29F800DB-70N6
M29W200BB, M29W200BT, M29W400BB, M29W400BT, M29W800AT, M29W800AB,
M28W320FCB, M28W320FCT
M29W160EB*, M29W160ET*, M29W320ET*, M29W128GH*
<TOSHIBA>
TC58FVM5T2ATG65
<Winbond>
W29GL128CH9T
 

guclusat

Tanınmış Üye
Süper Moderatör
#10
TSOP56 Soket MX29GL256E test edilmiş olup desteklemektedir.

Programlayıcı versiyonu: Programmer verision: 0xd2000059

<Chip information>;
NOR ID: 0xc2227e_0x2222ffff
Manufacturer: MXIC
Part number: *MX29GL256E
*Total memory size: 32 Mbytes
*Range 0x0 - 0x1ffffff
*Chip erase: supported
*Maximum erase time: 300 second(s)
*Type: 29 series
*Sec Sector: no

-------------

<Read data>:
NOR ID: 0xc2227e_0x2222ffff
Manufacturer: MXIC
Part number: *MX29GL256E
*Total memory size: 32 Mbytes
*Range 0x0 - 0x1ffffff
*Chip erase: supported
*Maximum erase time: 300 second(s)
*Type: 29 series
*Sec Sector: no
Reading data from 0x0 to 0x1ffffff.

-----------

<Verify After Read>:
NOR ID: 0xc2227e_0x2222ffff
Manufacturer: MXIC
Part number: *MX29GL256E
*Total memory size: 32 Mbytes
*Range 0x0 - 0x1ffffff
*Chip erase: supported
*Maximum erase time: 300 second(s)
*Type: 29 series
*Sec Sector: no
Reading data from 0x0 to 0x1ffffff.
Verify successfully. Total 33554432(0x2000000) bytes.